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| UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO(sus) =25V (Min) @ IC =10mA *High DC Current Gain hFE =70 (Min) @ IC=500mA =45 (Min) @ IC=2A =10 (Min) @ IC=5A *Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) *Straight Lead Version in Plastic Sleeves ("-1" Suffix) *Lead Formed Version in 16mm Tape and Reel ("T4" Suffix) *Low Collector - Emitter Saturation Voltage VCE(sat) = 0.3V (Max) @ IC =500mA = 0.75V (Max) @ IC = 2.0 A *High Current-Gain-Bandwidth Product fT = 65 MHz (Min) @ IC = 100 mA *Annular Construction for Low Leakage ICBO = 100 nA @ Rated VCB 1 TO-251 1: BASE 2: COLLECTOR 3: EMITTER MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Peak Base Current Total Device Dissipation @ TC=25C Derate above 25C Total Device Dissipation @ TA=25C* Derate above 25C Operating and Storage Junction Temperature Range SYMBOL VCB VCEO VEB IC IB PD PD TJ, Tstg VALUE 40 25 7 5 10 1 12.5 0.1 1.4 0.011 -65 to +150 UNIT V V V A A W W/C W W/C C THERMAL CHARACTERISTICS CHARACTERISTIC Thermal Resistance, Junction to Case Junction to Ambient* SYMBOL RJC RJA MAX 10 89.3 UNIT C/W C/W UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R213-001,A UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (Tc=25C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (note 1) Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain (note 2) hFE IC=500mA, VCE=1V IC=2A, VCE=1V IC=5A, VCE=2V IC=500mA, IB=50mA IC=2A, IB=200mA IC=5A, IB=1A IC=5A, IB=1A IC=2A, VCE=1V IC=100mA, VCE=10V, ftest = 10MHz 70 45 10 65 120 180 0.3 0.75 1.8 2.5 1.6 V VCEO(sus) ICBO IEBO IC=10mA, IB=0 VCB=40V, IE=0 VCB=40V, IE=0, TJ=125C VBE=7V, Ic=0 25 100 100 100 V nA nA nA SYMBOL TEST CONDITIONS MIN MAX UNIT Collector-Emitter Saturation Voltage (note 2) Base-Emitter Saturation Voltage (note 1) Base-Emitter On Voltage (note 1) DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (note 3) VCE(sat) VBE(sat) VBE(on) fT V V MHz pF Output Capacitance Cob VCB=10V, IE=0, f=0.1MHz *When surface mounted on minimum pad sizes recommended. (continued) NOTE 1: Pulse Test: Pulse Width = 300s, Duty Cycle 2%. NOTE 2: Pulse Test: Pulse Width = 300s, Duty Cycle 2%. NOTE 3: fT =hfe*ftest. UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R213-001,A UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR FIG. 1 POWER DERATING FIG. 2 SWITCHING TIME TEST CIRCUIT RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB100mA FOR PNP TEST CIRCUIT MSD6100 USED BELOW IB100mA REVERSE ALL POLARITIES FIG. 3 TURN-ON TIME FIG. 4 TURN-OFF TIME FIG. 5 DC CURRENT GAIN FIG. 6 "ON" VOLTAGE UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R213-001,A UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR FIG. 7 TEMPERATURE CURRENT (AMP) FIG. 8 THERMAL RESPONSE FIG. 9 ACTIVE REGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Fig. 9 is based on TJ(pk)=150C; Tc is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)150C. TJ(pk) may be calculated from the data in Figure 8. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R213-001,A UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR FIG. 10 CAPACITANCE UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R213-001,A |
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